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Chip Schottky Barrier Diodes FM723-NS Surface mount small signal type Features Extremely thin package Low stored charge Majority carrier conduction 0.014(0.35) 0.010(0.25) Formosa MS SOD-323S 0.106(2.70) 0.091(2.30) 0.008(0.20)Typ. 0.057(1.45) 0.041(1.05) 0.083(2.10) 0.067(1.70) Mechanical data Case : Molded plastic, SOD-323-S Terminals : Solder plated, solderable per MIL_STD_750, Method 2026 Polarity : Indicated by cathode band Mounting Position : Any Weight : 0.0001482 ounce, 0.0042 gram 0.005(0.12) 0.003(0.08) 0.031(0.80) 0.024(0.60) Dimensions in inches and (millimeters) Marking Code : 4 MAXIMUM RATINGS (AT T A =25 C unless otherwise noted) PARAMETER Repetitive peak reverse voltage Mean rectifying current 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) Capacitance between terminals Storage temperature Operating temperature f=1MHz and applied 10VDC reverse voltage CONDITIONS Symbol V RM IO I FSM MIN. TYP. MAX. 30 200 UNIT V mA o Forward surge current 1500 mA CT TJ T STG -40 -40 20 +125 +125 pF o C C o ELECTRICAL CHARACTERISTICS (AT T A =25 C unless otherwise noted) PARAMETER Forward voltage Reverse current I F = 200 mA DC V R = 30 V CONDITIONS Symbol VF IR MIN. TYP. MAX. 0.60 15 UNIT V uA o RATING AND CHARACTERISTIC CURVES (FM723-NS) Fig. 1 Forward characteristics 1000 REVERSE CURRENT : (A) Fig. 2 Reverse characteristics 10m 125 C O FORWARD CURRENT : (mA) 1m 75 C O 100 100 10 25 C O 5C 12 75 O C O C 10 O 25 O 1 25 C 1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.1 0 10 20 30 40 FORWARD VOLTAGE : (V) REVERSE VOLTAGE : (V) FIG.3-TYPICAL TERMINALS CAPACITANCE CAPACITANCE BETWEEN TERMINALS : (pF) Fig. 4 Derating curve (mounting on glass epoxy PCBs) 100 100 Io CURRENT (%) 5 10 15 20 25 30 35 REVERSE VOLTAGE : V 80 60 40 20 0 0 10 1 0 25 50 75 100 125 150 AMBIENT TEMPERATURE : Ta |
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